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SIX-PACK IGBT MODULES

Features:

•  Vces: 600V and 1700V. Ic(25): 13A - 640A
•  NPT, NPT³ or Trench IGBT with low Vce(sat),low switching losses, high RBSOA and short circuit ruggedness
•  Hiperfast diodes with soft recovery
•  Package with insulated base plate( 2500V rms)and pins for PCB mounting
•  Temperature sense using NTC thermistor

Click below to filter by product sub family:
Six-Pack IGBT Modules in E1, E2 and E3-Pack
Six-Pack IGBT Modules in E9-Pack
Remove sub family filter

Expand product table » »

PartNumber

Vces
(V)

IC25
Tc=25°C
IGBT
(A)

IC80
Tc=80°C
IGBT
(A)

VCE(sat)
typ
Tj=25°C
IGBT
(V)

Eoff
typ
Tj=125°C
IGBT
(mJ)

RthJC
max
IGBT
(K/W)

IF25
Tc=25°C Diode
(A)

IF80
Tc=80°C Diode
(A)

Package Style

MWI100-12T8T

1200

145

100

1.7

13.5

0.26

135

90

E3

MWI150-12T8T

1200

215

150

1.7

20

0.18

196

132

E3

MWI100-17E8T

1700

145

100

2.3

24.9

0.25

tbd

100

MWI15017E8T

1700

195

150

2.3

37.9

0.17

tbd

150

MIXA10W1200TMH

1200

17

12

1.8

1.1

2.00

19

13

MIXA20W1200TMH

1200

28

20

1.8

1.7

1.26

33

22

MIXA30W1200TMH

1200

43

30

1.8

3.0

0.84

44

29

MIXA40W1200TMH

1200

60

40

1.8

4.1

0.64

44

29

MIXA10W1200TML

1200

17

12

1.8

1.1

2.0

19

13

MIXA20W1200TML

1200

28

20

1.8

1.7

1.26

33

22

MIXA30W1200TML

1200

43

30

1.8

3.0

0.84

44

29

MIXA40W1200TML

1200

60

40

1.8

4.1

0.64

44

29

MIXA50W650TED

650

50

1.5

1.2(150°C)

MIXA75W650TED

650

75

1.5

1.7(150°C)

MIXA30W1200TED

1200

43

30

1.8

3.0

0.84

44

29

MIXA40W1200TED

1200

60

40

1.8

4.1

0.64

44

29

MIXA60W1200TED

1200

85

60

1.8

5.5

0.43

88

59

MIXA80W1200TED

1200

120

84

1.8

8.3

0.32

135

90

MIXD200W650TEH

650

200

1.6

7.5(150°C)

MIXA80W1200TEH

1200

120

84

1.8

8.3

0.32

135

90

MIXA100W1200TEH

1200

155

108

1.8

11.0

0.25

135

90

MIXA150W1200TEH

1200

220

150

1.8

16.0

0.18

190

130

IGBT Six-Pack and High Power Half Bridge Configuration

PartNumber

Vces
(V)

IC25
Tc=25°C
IGBT
(A)

IC80
Tc=80°C
IGBT
(A)

VCE(sat)
typ
Tj=25°C
IGBT
(V)

Eoff
typ
Tj=125°C
IGBT
(mJ)

RthJC
max
IGBT
(K/W)

IF80
Tc=80°C
Diode
(A)

Package
Style

1200V XPT IGBT

MIXA225W1200TFH

1200

360

250

1.8

27

0.115

185

MIXA300W1200TFH

1200

465

325

1.8

42

0.085

185

MIXA450W1200TFH

1200

650

450

1.8

68

0.060

265

MIXA600W1200TFH

1200

860

600

1.8

*

*

*

1200V SPT+IGBT

MIEB300W1200TFH

1200

530

375

1.8

30

0.07

260

MIEB450W1200TFH

1200

*

*

*

*

*

*

1700V Trench IGBT

MWI450-17T9

1700

600

425

2.1

150

0.057

225

1700V XPT IGBT

MIXA225W1700TFH

1700

355

250

*

*

*

*

MIXA300W1700TFH

1700

425

300

*

*

*

*

MIXA450W1700TFH

1700

635

450

*

*

*

*

XPT Half Bridge High Power Module in SimBus P package

PartNumber

Division

Vces
(V)

IC25
Tc=25°C IGBT
(A)

IC80
Tc=80°C
IGBT
(A)

VCE(sat) typ
Tj=25°C
IGBT
(V)

Eoff
typ
Tj=125°C
IGBT
(mJ)

RthJC
max
IGBT
(K/W)

IF25
Tc=25°C
Diode
(A)

IF80
Tc=80°C Diode
(A)

Package
Style

MIXA1400PF1200TSP

1200

2100

1400

1.95

220

0.02

1650

1200

MIXA1400PF1700TSP

1700

*

1400

*

*

*

*

*

FULL BRIDGE IGBT MODULES

PartNumber

Vces
(V)

IC25
Tc=25°C
IGBT
(A)

IC80
Tc=80°C
IGBT
(A)

VCE(sat)
typ
Tj=25°C
IGBT
(V)

Eoff
typ
Tj=125°C
IGBT
(mJ)

RthJC
max
IGBT
(K/W)

IF25
Tc=25°C
Diode
(A)

IF80
Tc=80°C
Diode
(A)

RthJC
max
Diode
(K/W)

Package
Style

MKI80-06T6K

600

89

67

1.8

2.8

0.60

105

67

0.65

E1-Package

MKI75-06A7T

600

90

60

2.1

2.5

0.44

140

85

0.61

E2-Pack

MIXA61H1200ED

1200

65

45

3.2

2.5

70

MIXA81H1200EH

1200

120

84

1.8

8.3

90

MIEB76H1200EH

1200

128

90

2.3

7.0

90

MIEB101H1200EH

1200

183

128

1.8

9.7

90

 

PartNumber

Vces
(V)

IC25
Tc=25°C
IGBT
(A)

IC80
Tc=80°C
IGBT
(A)

VCE(sat)
typ
Tj=25°C
IGBT
(V)

Eoff
typ
Tj=125°C
IGBT
(mJ)

IF80
Tc=80°C Diode
(A)

RthJC
max
Diode
(K/W)

Package
Style

MWI30-06A7-S

600

45

30

1.9

1.0

24

MWI50-06A7-S

600

72

50

1.9

1.7

45

 
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